4p GaAs、p InP上用Ti Pt作欧姆接触的研究

In this paper, we report the study of Ohmic contact of p-GaAs andp-InP using sputtered Ti/Pt film. Ohmic contacts are very stable in the temperature range of 300-500°C for alloying. The lifetime of the GaAs/GaAlAs laser made by this method has exceeded 6000 hours.