Top Gated Graphene Field Effect Transistors with High Normalized Transconductanc

High-performance graphene field-effect transistors (G-FETs) are fabricated with carrier mobility of up to 5400 cm(2)/V . s and top-gate efficiency of up to 120 (relative to that of back gate with 285 nm SiO(2)) simultaneously through growing high-quality Y(2)O(3) gate oxide at high oxidizing