Evolution of surface morphology and photoluminescence characteristics of 1.3 \mu

Evolution of surface morphology and optical characteristics of 1.3-\mum In0.5Ga0.5As/GaAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) are investigated by atomic force microscopy (AFM) and photoluminescence (PL). After deposition of 16 monolayers (ML) of In0.5Ga0.5As, QDs are formed and