Energy levels and radiative lifetimes of 3pns 3P0 and 3pnd 3P0 series of Si I

The energy levels and lifetimes of 3pns 3P0(n=7-35) and 3pnd 3P0 (n=6-17) series of neutral silicon are calculated and predicted by means of multichannel quantum defect theory (MQDT). In addition, the perturbation caused by core-excited state 3s3p3 is discussed. The 3pnd 3P0 series, especially 3p4d