Study on optical anisotropy properties of SiO2 films with different thermal anne

SiO2 films are deposited on Si substrates by an ion beam sputtering technique and continuously annealed in a quartz culture dish in air at various annealing temperature ranging from 20 to 750 oC with a step of 100 oC for a fixed time of 24 h. The effects of thermal treatment on optical anisotropy pr