r2j20602 • Built-in power MOS FET suitable for applications with 12 V input and low output voltage • Built-in driver circuit which matches the power MOS FET • Built-in tri-state input function which can support a number of PWM controllers • VIN operating-voltage range: 16 V max • High-frequency operation (above 1 MHz) possible • Lar ge average output current (Max. 40 A) • Achieve low power dissipation (About 4.4 W at 1 MHz, 25 A) • Controllable driver: Remote on/off • Built-in Schottky diode for bootstrapping • Low-side drive voltage can be independently set • Small package: QFN56 (8 mm × 8 mm × 0.95 mm ge average output current (Max. 40 A) • Achieve low power dissipation (About 4.4 W at 1 MHz, 25 A) • Controllable driver: Remote on/off • Built-in Schottky diode for bootstrapping • Low-side drive voltage can be independently set • Small package: QFN56 (8 mm × 8 mm × 0.95 mm