非常好的书籍，对于做放大器的同学非常有帮助Library of Congress Cataloging-in-Publication DataGonzalez. guillermoMicrowave transistor amplifiers: analysis and design/ guillermoGonzalez. 2nd edIncludes bibliographical references and indexISBN0-13-254335-41. Transistor amplifiers. 2. Microwave amplifiers. I. TitleTK78712G591996621381′325dc2096-9182CIPAcquisitions Editor: Eric SvendsenProduction Editor. Rose KernanCover Designer: Wendy Alling JudBuyer: Julia meehanEditorial Assistant: Kathryn E CassinoPrenticeHall @1997. 1984 by Prentice-Hall, IncUpper Saddle River, NJ 07458All rights reserved. No part of this book may bereproduced, in any form or by any means,without permission in writing from the publisherThe author and publisher of this book have used their best efforts in preparing this bookThese efforts include the development, research, and testing of the theories and programsto determine their effectiveness. The author and publisher shall not be liable in any event forincidental or consequential damages with, or arising out of the furnishing, performance, oruse of these programsPrinted in the United States of america20191817161514131211工SBN0-13-己54335-4Prentice-Hall International (UK)Limited, LondonPrentice-Hall of Australia Pty. Limited, SydneyPrentice-Hall of Canada Inc. TorontoPrentice-Hall Hispanoamericana, s.A., MexicoPrentice-Hall of india Private Limited, New DelhiPrentice-Hall of japan, Inc, TokyoPrentice-Hall Asia Pte Ltd, SingaporeCONTENTSPREFACE1 REPRESENTATIONS OF TWO-PORT NETWORKS1.1 Introduction. 11.2 The lmpedance, Admittance hybrid andABCd Matrices. 1Transmission-Line Concepts 4The Lossy Transmission Line, 201. 4 The Scattering Matrix and the chaincatering Matrix, 22Shifting Reference Planes, 261.6 Properties of Scattering Parameters, 28Scattering Matrix of n-Port Networks, 421.7 Power Waves and Generalized ScatteringParameters. 45Generalized scattering Matrix for n-PortNetworks 521. 8 Two-Port Network Parameters Conversions. 601.9 Measurement of Scattering Parameters, 611.10 Scattering Parameters of Transistors. 661.11 Characteristics of Microwave Transistors 71Bipolar Transistors, 71ContentsField effect Transistors, 79Problems. 862 MATCHING NETWORKS AND SIGNAL FLOW GRAPHS922.1 Introduction. 922.2 The Smith Chart. 932.3 The Normalized Impedance and admittanceSmith chart. 1052. 4 Impedance Matching Networks, 1122.5 Microstrip Matching Networks, 141Microstrip Lines, 141Design of matching Networks, 1522.6 Signal Flow Graphs and Applications, 175Applications of signal Flow Graphs, 1802.7 Power-Gain Expressions: AlternateDerivations, 185Power-Gain Expressions in Terms of spparameters, 1922.8 VSWR Calculations. 194Problems. 2003 MICROWAVE TRANSISTOR AMPLIFIER DESIGN212Introduction. 2123.2 Power Gain Equations, 2133.3 Stability Considerations, 2173.4 Constant-Gain Circles: Unilateral Case, 228Unconditionally Stable Case, ISil <1, 231Potentially Unstable Case, ISil > 1, 2343.5 Unilateral Figure of merit, 2383.6 Simultaneous Conjugate match:Bilateral Case. 2403. 7 Operating and Available Power-Gain Circles, 247Operating Power-Gain Circles, 247Unconditionally stable bilateral case, 247Potentially unstable bilateral case, 252Available power-Gain Circles. 257Unconditionally stable bilateral case, 257Potentially unstable bilateral case, 2603. 8 Constant VSWR Circles. 2603.9 DC Bias Networks. 273BT Bias Networks, 273GaAs FEt Bias Networks. 280Problems. 283Contents4 NOISE BROADBAND, AND HIGH-POWERDESIGN METHODS29441 Introduction. 29442Noise in Two-Port Networks, 2954.3 Constant noise Figure Circles. 2994.4 Broadband Amplifier Design, 323Balanced amplifiers, 327Feedback Amplifiers, 3334.5 Amplifier Tuning, 3484.6 Bandwidth analysis. 3484.7 High-Power Amplifier Design, 352Class-A Operation, 353Class-B and Class-C Operation, 356Intermodulation distortion 362Power Combiners. 36Design Examples, 3654.8 Two-Stage amplifier design, 372Problems. 3745 MICROWAVE TRANSISTOR OSCILLATOR DESIGN3845.1 Introduction. 3845.2 Oscillation Conditions. 384Feedback Oscillators. 384One-Port Negative-Resistance Oscillators, 3885.3 Two-Port Negative-Resistance Oscillators, 3975.4 Oscillator Design USing Large-SignalMeasurements. 4045.5 Oscillator Configurations, 411Dielectric resonator oscillators. 414YIG Oscillators. 422Varactor-Tuned Oscillators, 425Problems. 428APPENDIX COMPUTER-AIDED DESIGNS433APPENDIXA A,1. CIRCLE EQUATIONSBILINEAR TRAASFORMAT/OM449A.2. DER/VATION OF THE INPUT ANDOUTPUT STABILITY CIRCLES IEQUATIONS3.35AND(33645TAPPENDIX B STABILITY CONDITIONS453ContentsAPPENDIX C UNCONDITIONAL STABILITY CONDITIONSK> 1 and B1>0462APPENDIXD DERIVATON OF THE UNILATERAL CONSTANT-GAIN CIRCLES EQUATION (3, 4. 10JA464APPENDIXE E1 ANALYSIS OF3.6.5)AND (3.6.6 FORIMs<1 AND IML<1,466E2 CONDITION FOR A SIMULTANEOUSCONJUGATE MATCH467APPENDIX F DERIVATION OF GTmax EQUAToN(3.6.107469APPENDIX G DERIVATION OF THE CONSTANT OPERATINGPOWER-GAIN CIRCLES472APPENDIXH EXPRESSIONS FOR TML474APPENDIX CONSTANT VSWR CIRCLES476APPENDIX J MAPPING OF CIRCLES IN THETs AND TL PLANES,478APPENDXK NO/SE CONCEPTS480APPENDIXL NOISE FIGURE OF AN AMPLIFER485APPENDIX M CONDITIONS FOR A STABLE OSCILLATION493IDEX499PREFACEIn this second edition, I have expanded considerably the material in the origi-nal book. New material has been included throughout the book to cover scat-tering parameter techniques in detail. Additional design procedures have beenincluded for amplifiers and oscillators. At the suggestion of many readers, detailed derivations are included for several relations that were either referencedor included in the problems sections of the first edition. The revisions and additions make the text as self-contained as possible. Many new examples andproblems have been addedThe main objective of this book has remained to present a unified treat-ment of the analysis and design of microwave transistor amplifiers using scat-tering parameters techniques. The term microwave frequencies is used to referto those frequencies whose wavelengths are in the centimeter range(i.e, 1 to100 cm). However, the design procedures and analysis presented in this bookare not limited to the microwave frequencies. In fact, they can be used in anyfrequency range where the scattering parameters of a transistor are knownThis book is intended to be used in a senior-graduate-level course inmicrowave transistor amplifiers and oscillators, or by practicing microwave engineers. It is assumed that the reader has completed the undergraduate network theory electronics, and electromagnetic courses, or equivalent coursesThe transmission-line theory needed is fully covered in this book, especially theuse of smith charts as a design toolThe main transistors used in microwave amplifiers and oscillators arethe silicon bipolar junction transistor (BJT)and the gallium-arsenide metalsemiconductor field-effect transistor (GaAs MESFET). The high-electroniPresamobility transistor is also discussed (HEMT). The bjt performs very well upto approximately 4 GHz. In this frequency range the BJTs are reliable, low costhave a high gain, and a low noise figure. The GaAs mESFet performanceabove approximately 4 gHz is superior to that of the bJT, as well as for verylow-noise applications below 4 gHzMicrowave transistors are conveniently represented by two-port net-works and characterized by scattering parameters. The scattering parametersare popular because they are easy to measure with modern network analyzerstheir use in microwave transistor amplifier design is conceptually simple, andthey provide meaningful design information. Furthermore, flow graph theoryis readily applicableChapter 1 to 4 present the basic principles and techniques used in micro-wave transistor amplifier analysis and design. These chapters provide the foun-dation for a well-designed microwave transistor amplifier. specifically, inChapter 1 a detailed review of transmission-line concepts is given. The sectionon transmission lines provides a comprehensive presentation of transmission-line theory under a sinusoidal excitation. A new section dealing with powerwaves and generalized scattering parameters is included. The measurement ofthe scattering parameters is discussed. The section on the characteristics ofmicrowave transistors has been updatedChapter 2 begins with a discussion of smith charts. The design of matching networks in the smith charts using lumped elements and microstrip transmission lines is discussed, Two-and three-lumped-elements matching networksare discussed in detail, as well as a variety of microstrip matching configurations. Signal flow graphs are used to derive the gain relations, and a section onthe derivation of power relations directly from the incident and reflected wavesis included. Power-gain expressions in terms of the power scattering parameters are given. Relations for the calculations of vSwrs and mismatch factorsare discussedChapter 3 deals with microwave transistor amplifier design. A detailedderivation of the stability conditions has been included Design procedures arepresented involving the transducer power gain, the operating power gain, andthe available power gain. Constant-gain circles for unilateral and bilateral devices are derived. a section dealing with the trade-offs between VSWRs andgain has been included. The last part of the chapter discusses the selection anddesign of various dc bias networksChapter 4 treats the topics of low-noise amplifiers and the trade-offs between low-noise performance, gain, and VSWRs. New material on the designof broadband amplifiers balance amplifiers couplers, and feedback amplifiersis included. The section of power amplifiers has been expanded significantly.Chapter 5 discusses oscillators. Basically, an oscillator consists of an amplifier with the proper amount of feedback to make it oscillate. The negativeresistance approach to oscillator design is studied in detail. a variety ofoscillators are designed using BJTS, GaAs FETs, dielectric resonators(DRs)and varactor diodesPrefaceSeveral new appendixes that supplement the text material are includedFor example, Appendix a discusses circles equations, the bilinear transformation, and transformation properties of circles. The derivation of the stabilityconditions is provided in Appendix B. Appendix i shows the derivation of theconstant input and output VSwR circles. Appendix k discusses noise conceptsand Appendix L shows the derivation of the noise figure relation for a two-port network.The number of problems has been increased significantly. The problems form an integral part of the text, and even if they are not solved, theyshould be readMany of the design calculations in this book can be conveniently madeusing a simple computer-aided design( Cad) program or a programmable calculator. In the first edition of the book, a listing of the program UM-MAAD(University of Miami Microwave Amplifiers Analysis and Design) was givenThe latest version of UM-MAAD can be obtained from the author by sendinghim, at the address provided at the end of this Preface, a 3. 5" disk and astamped, self-addressed envelope. This CAD program, written in FORTRAN77, is simple to use.For completeness, some design examples using a large-scale CAD program are given in the Appendix titled " Computer-Aided Designs. The examples illustrate some of the simulations and optimizations that can be performedusing a large-Scale CAD program. It is only after the problem is fully understood that CAD techniques should be used. Otherwise, the natural human tendency to be erroneous and inefficient can substantially increase the cost of adesign. The large-scale CAd program used in the Appendix titled "ComputerAided Designs?"is the Hewlett-Packard HP85150B Microwave and RF DesignSystems (referred to as the HP MDS program). A copy of this program was donated by Hewlett-Packard to the University of Miami in 1990 for teaching andresearch purposes.Many of my students and users of the first edition have provided input tothis book. I wish to thank all of my former students for their helpful commentsespecially the invaluable suggestions and constructive criticisms from BrankoAvanic, William Sanfiel, Deniz Ergener, Ching Y Kung, Claudio J. Traslavinaevent Y. Erbora, Augusto E. Rodriguez, Edgar Duque, Sergio Bustamante,and William C. PirkleThis second edition was carefully reviewed by Orlando Sosa, RamonPonce, and Mahes m. ekanayake. The contributions of Dr Branko Avanic to thesolutions of the problems were very helpful, as were his many inputs. Dr. KamalPremaratne, a friend and colleague, has provided comments and inputs to boththe first and second editions of this book especially in the chapter on oscillatorsOver the years, I have also received support and encouragement fronseveral colleagues-namely, Professors Tzay Young, Reuven Lask, Kamal Ya-coub, Manuel A. Huerta, and James C. NearingI also wish to give special thanks to Dr. Les Besser. In the 1970s, he firstintroduced me to CAD methods applied to microwave transistor amplifier