Atomistic origin of the pressureenhanced bandgap expansion of semiconductor nano

This handbook provides essential data for the field of semiconductors, including properties, applica

In this paper, a narrow-band tunable external-cavity semiconductor laser with the Littman set-up is

Semiconductor UV photonics research has emerged as one of the most heavily invested areas among semi

In this paper, we present a model characterizing the interaction of a radiative shock (RS) with a so

模拟非高斯过程的Karhunen-Loeve扩展式中正交变量的求解，黄淑萍，，摘要：本文提出了一种模拟强非高斯过程（有预定的边缘分布函数和协方差函数）的算法。此法是基于Karhunen-Loeve(K

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连接ONENET所需的OBJECT和RESOURCR---IPSO SmartObject Guideline

傅立叶级数在多个领域的应用.很好的外文资源

SSD2119 Fab Expansion.pdf