Low temperature deposition of p type nc Si:H thin films for superstrate a Si:H b
低温沉积p型氢化纳米硅与非晶硅pin顶衬太阳电池，胡志华，Shi Qingnan，Boron doped nc-Si:H p-layers were deposited by PECVD technique at a low substrate temperature (~60 0C) with various hydrogen dilution ratio of 150, 100 and 50 respectively. Transmi
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