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The influence of water vapor content in high vacuum chamber during the coating process on physical p
Mechanisms of trapping effects in short-gate GaN-based high electron mobility transistors with pulse
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During development, cells and tissues undergo dynamic changes in pattern and form that employ a wide
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The technology of zinc-diffusion to improve catastrophic optical damage (COD) threshold of compressi
In this paper, the fabrication process and characterization of Bi2Te3 topological insulators (TIs) s
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