暂无评论
Differences between the Super SEL Controller Type E/G and Type A/B
The application of asymmetric Schottky barrier and electrode area in an MgZnO metal-semiconductor-me
三核锇羰基氢化物研究:具有端桥氢配体的金属角形和线形结构,高小珍,李楠*,利用密度泛函理论研究了三核锇羰基氢化物衍生物H2Os3(CO)n (n = 12, 11, 10, 9, 8)体系,其中包括具
A tunable dual-band infrared polarization filter is proposed and investigated. Based on the perfect
Metal-semiconductor-metal photodetectors on semi-insulating GaAs with interdigital electrodes showed
A self-aligned process to fabricate a “metal-quantum dot-metal” structure is presented, based on an.
In this work, we propose a new design of all-optical triplexer based on of metal–insulator–metal (MI
DimensionReductionAGuidedTourgiveatutorialoverviewofseveralfoundationalmethodsfordimensionreduction.
英国某大学基于粗糙集上的属性约见base=ones(row);r=eval(['ssr'num2str(column)]);attrinu=column-1;forj=attrinu:-1:1sig=
Supervisednonlineardimensionalityreductionforvisualizationandclassification提出S-ISOMAP的论文，配合程序可以更容易理解
暂无评论