IC-Haus iC-MFN I/O接口（I/O Circuits）pdf,IC-Haus iC-MFN I/O接口（I/O Circuits）IC-MFN8-FOLD FAIL-SAFE N-FET DRIVERiC HausRev al, Page 3/13PACKAGES QFN24 to JEDECPIN CONFIGURATION QFN24PIN FUNCTIONS(top view)No. Name FunctionOUT1 Output channel 1192 VB Supply Voltage3 Vbr Supply Voltage(R)4 EN5 Enable input hi- level= 5V5 EN10 Enable input hi-level= 10V6 IN1 Input channel 17 N2 Input channel 28 IN3 Input channel 39 N4 Input channel 4MEN10 N5 Input channel 5code11 N6 Input channel 612 IN7 Input channel 713 IN8 Input channel 814 NOK Output inverted status15 ENFS Enable input full scale hi-level = VB16 GNDR Ground(R)1217 GND Ground18 oUT8 Output channel 819 oUT7 Output channel 720 OUT6 Output channel 621 OUT5 Output channel 522 OUT4 Output channel 423 OUT3 Output channel 324 OUT2 Output channel 2IC-MFN8-FOLD FAIL-SAFE N-FET DRIVERiC HausRev al, Page 4/13ABSOLUTE MAXIMUM RATINGSBeyond these values damage may occur; device operation is not guaranteedItem ParameterConditionsFigUnitMiMaxG001 VB, VBR Supply Voltage-0.3G0020Voltage at OUT1.8, NOK-0.340G003OVoltage at IN1.8, EN5, EN10, ENFS-0.340G004 V(GNDR)Voltage at GNDR referenced to GND0.30.3GO05 V(GND)Voltage at GND referenced to GNDR-0GO06 V(VBR) Voltage at VBR referenced to VB-0.30.3G007V(B)Voltage at VB referenced to VBR-0.30.3G008mx()Current in oUT1.8. NoK. IN1...8-1010mAEN5 EN10 ENFSGoo Imx(Current in VB. VBR10mAG010|mx(Current in GND. GNDR10mAG011|aESD susceptibility at all pinsHBM 100 pF discharged through 1.5 kS2G012Operating Junction TemperatureGO13 TsStorage Temperature Range55125THERMAL DATAOperating Conditions: VB=VBR=4.5. 40V, GND= GNDR=OVItem SymbolParameterConditionsFUnitMin. Typ. MaTo1 TaOperating Ambient Temperature RangeThermal Resistance Chip/Ambient SMD assembly, no additional cooling75K/All voltages are referenced to ground unless otherwise statedAll currents into the device pins are positive; all currents out of the device pins are negativeIC-MFN8-FOLD FAIL-SAFE N-FET DRIVERiC HausRev al, Page 5/13ELECTRICAL CHARACTERISTICSOperating Conditions: VB=VBR=4.5.40V, GND= GNDR=0V,Tj=-40.125C unless otherwise statedItem Symbol ParameterConditionsT] FigUnitMin. Typ.MaxTotal device001MBPermissible Supply Voltage4.540002|(vB)Supply Current in VBNo load. en5=loEn10=o1.23.6mAENFS= loSupply Current in VBNo load en5= hLen10= lo3.26.6mAENFS =lo IN1..8= hiVB=8...40V004vB)Supply Current in VBNo load en5= lo En10= hi3.268mAENFS =IO, IN1.8=hiVB=13005(vB)Supply Current in VBNo load en5=lo en10=lo6.6mAENFS hi. N1.8=hVB=4.5..40V006 I (VBR)Supply Current in VBRtbd007|(GNDCurrent in gndNo load7mA008(GNDR)Current in GNDRNo|oad, all oUTx〓htbdMACurrent Driver qUT18101 VC(OUTx)hi clamp voltage hi10=10 mA4260102 VC(OUTx)lo Clamp Voltage lo referenced to 1()=-10 mA-04the lower voltage of GND, GNDR103 VS(OUTx)hi Saturation Voltage hi referenced Vs(hi=VB-VO, INX=hi,to yBEnfS hiI(=-0.5mA0.8)=-2mA104 VS(OUTx) loSaturation Voltage lo referenced I(=0.5mA0.2tO GND10=2 mA0.8105Vr(OUTx)Output Voltage regulated, no load EN5=hi, INx=hi,I()=0m4.75.3106 Vr(OUTx) Output Voltage regulated, no load EN10= hi, INx=hi10=OmA9410.6107 Ri(OUTx) Output ResistanceEn10= hi or en5= hi INx hiI(=⊥2mA100500108 M(OUTx) Output VoltageOUT×)=2pA, GND open600m109 pd(oUTx) Pull-Down CurrentV(OUTx=1V, GND open120110Rpd(OUTx)Pull-Down Resistor atOUTxVB,VBR,V(OUTX)=10V,GND50300KQreferenced to ndRoren111 Rpd(OUTx) Pull-Down Resistor at OUTx VB,VBR, V(OUTX)=40V,GND0600referenced to ndropen112 Isc(OUTx)ld Short circuit current loV(=0.8V.B10113 Isc(OUTx)hiShort circuit current hiV()=0.VB-0.8V103A114 Vsh(OUTx) Output Voltage at short circuit of EN5=hitwo outputsAt two different input signals hiand lo115 Vsh(OUTx)Output Voltage at short circuit of EN10= hi oder ENFS= hi,1.3two outputsAt two different input signals hiand lo116 Vt(OUTx)hi Threshold Voltage hi monitoring Vt(-=VrO) or0.8comparatorVto= VB-vO117 Vt(OUTx)lo Threshold Voltage lo monitoring Vt(=Vr0-V(orcomparatorB-V118 VtOhys HysteresisVtohys= vt(lo-vtohi300mvIC-MFN8-FOLD FAIL-SAFE N-FET DRIVERiC HausRev Al, Page 6/13ELECTRICAL CHARACTERISTICSOperating Conditions: VB=VBR=4.5.40V, GND= GNDR=0V,Tj=-40.125C unless otherwise statedItem Symbol ParameterConditionsT] FigUnitin.TyMaxInput IN1.8, EN5, EN10, ENFS201 VcOhiClamp Voltage hi10=10mA60202 Vc()loClamp Voltage lo referenced to 10)=-10 mA-0.4the lower voltage of GND, GNDR203 Vt(hiThreshold Voltage hi1.15204Vt()oThreshold Voltage Io0.81.05205 Vt(Ohys Input HyVtohys=Vtohi-vtolo200400206|pd1()Pull-Down Current 10. 4V<VO<Vtohi5225350207|pd2(Pull-Down Current 2V()>14V45208cn()Input CapacitanceF209(Leakage CurrentVB, VBR=0V,V0=0.40V-10Supply and Temperature Monitor301ⅣBonTurn-On Threshold VB3.84.3302 BOffTurn-Off Threshold VBDecreasing voltage VB3.44.0303 VBhys HysteresisVBhys= VBon-VBotf200mV304 ToffTurn-Off TemperatureIncreasing temperature145160180C305TonITurn-On temperatureDecreasing temperature130147170c306TThys=Toff-To13Ground monitor gNd, ndr401 Vt(hiThreshold Voltage hi gnDReferenced to NdR270mvMonitor402t()loThreshold voltage lo GNDReferenced to NDR403 Vt(hysVt(hys =Vt(hi-vt(lo560404|(hiThreshold Voltage hi GNDRReferenced to gnd270mV405 Vt(lohreshold Voltage lo GNDRReferenced to gndMonitor406ⅣthHYsteresIsVtohys=Vtohi-Vt(lo60407Ⅳc(hiClamp Voltage gndr hi1 mA04referenced to gnd408Vc(lo Clamp Voltage GNDR lo1O1 mA-0.4referenced to gNdStatus output NoK501 Vc(NOK)hi Clamp Voltage hi)=10mA502 Vc(NOK)lo Clamp Voltage lo referenced to 10=-10 mA-0.4the lower voltage of GND, GNDR503(NOK) Leakage CurrentGND <V(NOK )<VB504 Vs(NOK)lo Saturation Voltage lo referenced I()=0.5mA0.2to gnd10=2 mA0.8505 Isc(NOK)lo Short circuit current loVO=0.8 V...VB310mASupply Monitor VB, VBR601 Vt(VB)hi Threshold Voltage hi VB MReferenced to vBr270602 Vt(VB3)lo Threshold Voltage lo VB MReferenced to VBr603 Vt(VB)hys HysteresisVtOhys =Vtohi-Vtolo60604 Vt(VBR)hi Threshold Voltage hiVBRReferenced to vB270Monito605 Vt(VB)lo Threshold Voltage lo VBRReferenced to vb50Monitor606 Vt(VBR)hys HysteresisVtohys= Vt(hi-Vt(lo5607 Vc(VBR)hi Clamp Voltage hi10=1 mA, VcO=V(VBR)-V(VB04608 Vc(VBR)Io Clamp Voltage lo10=-1 mA, VCO=V(VBR)-0.4V(VB)IC-MFN8-FOLD FAIL-SAFE N-FET DRIVERiC HausRev al, Page 7/13ELECTRICAL CHARACTERISTICSOperating Conditions: VB=VBR=4.5.40V, GND= GNDR=0V,Tj=-40.125C unless otherwise statedItem Symbol ParameterConditionsT] FigUnitNoMin.TyMaxTestmode en5 en10 enfs701 ToNiThreshold voltage hi disable test EN5=EN10=ENFS60|mV702 Vt(loThreshold Voltage lo enable test EN5=EN10=ENFS320703 Vt(hys HysteresisVtohys= vtohi-vt(loIming901 tp(OUTx)Propagation delay({NX,EN5Jo→h)→90%UT0.451.1NX,EN5→OUTX({Nx,EN5}hi→o)→10%0UTxCLoado=100 pF902 tp(OUTx)Propagation delayRINX, EN5ylo-hi)-90%OUTX1.3NX.EN5→OUTx({Nx,EN5}hi→l)→10%0UTxCLoad(=1 nF903 tp(OUTx)Propagation delay({NX,N5}o→hi)-90%UT2.23.7NX EN5 >OUTX(INX, EN5hi >lo),10 %OUTx904 tp(OUTx)Propagation delay({NX,EN5o→h)-90%UTx58.1NX,EN5→OUTxRINX, EN5]hi-lo)10%OUTXCLoad(=5nF905 tp(OUTx) Propagation delay(INX,EN10Ho >hi)>90%OUTX0.71.6NX,EN10→oUTX({NX,EN1o}hi→10)→10%0UTxCLoad(=100 pF906 tp(OUTx)Propagation delay({Nx,EN10o→hi)→90%OUTx2.3s小X,EN10-OUTX({NX,EN1o}hi→o)→10%0UTxCLoad(=1 nF907 tp(OUTx)Propagation delay({NxEN10yo→h)→90%0UTX3.97.1Nx,EN10→OUTx({Nx,EN10hi→o)→10%OUTxCLoad(=2nF908 tp(OUTx)Propagation delay({Nx,EN10J→hi)→90%OUTx16NX,EN10→OUTNX,EN10hi→0)→10%0UTxCLoad0=5nF909 tp(OUTx) Propagation delay({NX,ENFs}o→h)→90%OUx1.43.1usNX,ENFs→OUTx(INX, ENF Shi-lo)-10%OUTXCLoad(=100 pF910 tp(OUTx)Propagation delay({NX,NFSo→h)→90%0UT598Nx,ENFs→OUTX({NX, E NF S]hi→|o)→10%0UTXCLoad(=1 nF911 tp(OUTx)Propagation delayRINX, ENFSJlo-hi)90%OUTX9.216.7NX,ENFs→OUTx({NX, ENF]h→|)→10%0UTxCLoad(=2nF912 tp(OUTx)Propagation delay(INX, ENFS]lo >hi), 90%OUTXX,ENFS→OUTXRINX, ENF]hi-Io)-10%OUTXCLoad(=5nF913 dv(dt Slew rateVB=24V, CLoad(=100 pF914 dv(/dt Slew rateVB=24V, CLoad(=1nF2.24.5「c915 dv()dt Slew rateVB=24 V, CLoado=2 nF1.22.5916 dv(dt Slew rateVB=24V, CLoad(=5nF0.51.2V/usIC-MFN8-FOLD FAIL-SAFE N-FET DRIVERiC HausRev al, page 8/13ELECTRICAL CHARACTERISTICS: Diagrams1V(Nx.EN5 EN10 ENFS)V(OUTx)P(OUTXtp(oUTxFigure 1: Propagation delaysIC-MFN8-FOLD FAIL-SAFE N-FET DRIVERiC HausRev al, Page 9/13DESCRIPTION OF FUNCTIONSHi-level output configurationICUTX 4The device iC-Mfn has three adjustable hi-levels fordriving N-channel fets. The configured hi-level is comon to all outputs oUTx and the maxmimum level isthe power supply VB potential. The hi-level configura-on inputs are used simultaneous for enabling theVcu>(oLT为level at the outputs oUTx. The hi-level at exactly oneinput eN5, en10 or ENF S configure the voltage of hilevel and enable the outputs. If more than one of theseinputs have hi-level the outputs remains disabled. Thehi-level 5v(configured with EN5= hi) and 10V(configured with EN10 hi) are internally generated by avoltage reference and regulated. The hi-level VB(con- Figure 3: Output characteristic of the regulatedfigured with enFS= hi) is an unregulated connectionpush-pull-output at OUTXto VB. In this case the voltage swing depends directlyfrom the power supply VBOutput characteristic of the lowside transistorThe lowside output transistors at the eight channelsdemonstrate a resistive behavior with low voltageV(OUTx)and behave as a current sink with finite out-put resistance with higher voltagesOutput characteristics of the highside transistorThe highside output transistors at the eight channels I(OUTx)+demonstrate a resistive behavior with low voltage (VB/oUTx)and behave as a current source with finiteoutput resistance with higher voltagesFigure 4: Output characteristic of the lowside tran-sistor at oUTxStatus output NoKThe status output NoK is a current limited 40V proofopen-drain output. The output transistor is switchedif the hi-level of the outputs outXexactly one pin ENX, the outputs have reached the volt-Figure 2: Output characteristic of the highside tran- age levels defined by the inputs INx, the power supplysistor at○UTXvoltage is above the power-on threshold, the temperature is below the switch off temperature and all powersupply pins are connectedOutput characteristic of the regulated push-pull-output at OUTXThe hi-level 5V and 10V is generated with a regulatedpush-pull output and demonstrate a resistive behavior with low voltage changes and behave as a currentsource with finite output resistance with higher voltagechangesIC-MFN8-FOLD FAIL-SAFE N-FET DRIVERiC HausRev al, Page 10/13-down currentslpd(▲rder to enhance noise immunity with limited powerIpd10dissipation at inputs INX, EN5, EN10 and ENFS thepull-down currents at these pins have two stages. Witha rise in voltage at input pins INX, EN5, EN10 undENFS the pull-down current remains high until VtohiIpd2Ovo decreasing( Electrical Characteristics No. 203); above this thresh-old the device switches to a lower pull-down currentIf the voltage falls below tolo(Electrical Character-VoloToniistics No 204 ), the device switches back to a higherpull-down currentFigure 5: Pull-down currents at INX, EN5, EN10 andENFSDETECTING SINGLE ERRORSIf single errors are detected, safety-relevant applications require externally connected switching transistorsto be specifically shut down. Single errors can occur3.5when a pin is open(due to a disconnected bondingwire or a bad solder connection, for example )or whentwo pins are short-circuitedWhen two output of different logic levels are short-circuited, the driving capability of the lowside driver willM(OUTxpredominate, keeping the connected N-channel FETSin a safe shutdown stateVith open pins VB, VBR, GNd or GNDR IC-MFNFigure 6: Output characeristics at OUTX With loss ofVB. VbR Or GNDRswitches the output stages to a safe, predefined lowstate via pull-down resistors and current sources at Loss of GND potentialne outputs, subsequently shutting down any externally If ground potential is not longer applied to GND, theconnected N-channel fetsoutput stages are shut down and the outputs tied toGNDR via current sources and internal pull-down reLoss of VB potentialsistors with a typical value of 200 ks2If power supply potential is no longer applied to the VB-pin, the output stage highside drivers are shut down I(OUTx)Aand the outputs actively tied to GNd via the lowside[∞AdriversLoss of VBR potentialIf power supply potential is no longer applied to theVBR-pin, the output stage highside drivers are shutdown and the outputs actively tied to gnd via the lowside driversLoss of GNDR potentialVOUTxIf ground potential is no longer applied to the GNDR-pin, the output stage highside drivers are shut downand the outputs actively tied to gnd via the lowside Figure 7: Output characeristics at oUtx with loss ofdriversGND