High quantum efficiency of depth grade doping negative electron affinity GaN pho

A parametric optimization method is proposed in the design of a high-efficiency free-form illuminati

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Recently there has been great progress in laser-driven plasma-based accelerators by exploiting high-

Demonstration of InAlN/AlGaN high electron mobility transistorswith an enhanced breakdown voltage by

We theoretically investigate multiple electron rescatterings in high-order harmonic generation with

High-strain InGaAs/GaAs quantum wells (QWs) are grown by low-pressure metal-organic chemical vapor d

Light extraction efficiency enhancement of GaN-based blue LEDs based on ITO/InxO ohmic contacts with

Gallium nitride (GaN)-based light-emitting diodes (LEDs) are important for lighting and display appl

Negative