InAs/GaAs quantum dots grown on different GaAs substrates with graded InxGa1−xAs

The expressions of pulse characteristics such as output energy, peak power, and pulse width are obta

利用分子束外延生长法生长出了GaAlAs/GaAs梯度折射率分别限制单量子阱结构材料。对样品进行了光荧光谱、双晶X射线衍射和电化学电容-电压分布测量。实验结果表明,样品质量达到了设计要求。利用该材料制

Double pulse generation in a highly nonlinear GaAs optical waveguide

Broadband, wide-angle antireflection in GaAs through surface nanostructuring for solar cell applicat

We investigate the nonlinear response of terahertz (THz) metamaterial perfect absorbers consisting o

一种自上而下制备单分散胶体硫化铅量子点的方法，杨静，高敏锐，本文采用一种简便且环境友好的

Two-photon absorption (2PA) in zinc sulphide (ZnS) and Mn2+-doped ZnS quantum dots is reported by th

By using CdSe/ZnS quantum dots (QDs), we study the effect of cavity quantum electrodynamics on the c

Shell-dependent electroluminescence from colloidal CdSe quantum dots in multilayer light-emitting di

We presented a decoding method of quantum dots encoded microbeads with its fluorescence spectra usin