Annealing effects on residual stress of HfO2/SiO2 multilayers

HfO2/SiO2 multilayer films were deposited on BK7 glass substrates by electron beam evaporation method. The effects of annealing at the temperature between 200 and 400 centigrade on residual stresses have been studied. It is found that the residual stress of as-deposited HfO2/SiO2 multilayers is comp