Non-volatile memories (NVMs) such as Phase Change Mem-ory (PCM) have been considered as promising candidates ofnext generation main memory for embedded systems due totheir attractive features. These features include low power,high density, and better scalability. However, most exist-ing NVMs suer from two drawbacks, namely, limited writeendurance and expensive write operation in terms of bothtime and energy. These problems are worsen when modernhig