Diode Pumped Passively Q Switched and Mode Locked Nd:LuVO4 Laser with a GaAs Waf
Simultaneous Q-switching and mode locking (QML) in a diode-pumped Nd:LuVO4 laser using a GaAs wafer as saturable absorber is experimentally demonstrated in a Z-type folded cavity. The repetition rate of the Q-switched pulse envelop increases from 48 to 116 kHz and the average output power increases
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