Analytical Modeling of 4H SiC MESFET for High Power and High Frequency Response:
高功率和高频响应的4H-SiC-MESFET的分析建模 这是对4H-SIC(碳化硅)MESFETS的分析模型的仿真。 考虑到不同的制造参数(例如离子剂量,离子能量,离子范围和退火效应参数),已开发出该模型以获取阈值电压,漏极-源极电流,固有参数(如栅极电容,漏极-源极电阻和跨导)
文件列表
Analytical-Modeling-of-4H-SiC-MESFET-for-High-Power-and-High-Frequency-Response-main.zip
(预估有个7文件)
Analytical-Modeling-of-4H-SiC-MESFET-for-High-Power-and-High-Frequency-Response-main
LICENSE
1KB
README.md
459B
source code
Ids_Vds.m
4KB
Cgd_Vds.m
3KB
Cgs_Vgs.m
3KB
Ron_resistance.m
1KB
Transconductance.m
4KB
暂无评论