infineonMOSFETS和IGBT的区别IGBT(InsulatedGateBipolarTransistor)1DifferencesBetweenMOSFETandIGBT1.1StructureTheIGBTcombinesinitalltheadvantagesofthebipolarandMOSfieldeffecttransistor.Ascanbeseenfromthestructuresshownbelow,theonlydifferenceliesintheadditionalp-zoneoftheIGBT.Duetothepresenceofthislayer,holesareinjectedintothehighlyresistiven-layerandacarrieroverflowiscreated.Thisincreaseinconductivityofthen-layerallowstoreducetheon-statevoltageoftheIGBT.Sourcen+AlSiO+2
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