13001 pdf,13001三极管资料:TO-251 PlasTIc-Encapsulate Transistors
3DD13001 TRANSISTOR（ NPN ）
FEATURES
Power dissipaTIon
PCM : 1.2 W（Tamb=25℃）
Collector current
ICM : 0.2 A
Collector-base voltage
V(BR)CBO : 600 V
OperaTIng and storage juncTIon temperature range
TJ，Tstg: -55℃ to +150℃
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