gq47251

• Isolated Power Supply for Insulated-Gate Bipolar including methodology, testing, and design files to Transistor (IGBT) Gate Drive quickly evaluate a

SiCDescription This reference design is an automotive qualified, isolated gate-driver solution for driving Silicon Carbide (SiC) MOSFETs in half-bridg

针对SiC MOSFET的基本特性，对其驱动和保护电路的设计提出以下要求：（1）驱动能力满足要求，要能够提供足够的驱动功率和驱动电流。（2）合理设置门极驱动电阻和Cgs电容，适当增大开关时间，减小di/dt和du/dt，降低电路寄生参数带来的桥臂串扰问题。（3）由于SiC MOSFET的导通阈值电压