SRAM位单元内NMOS的静态漏电流优化,阳功桥,何卫锋,本文基于40纳米低功耗工艺对NMOS的halo结构进行优化,实现了SRAM(staticrandomaccessmemory,静态随机存储器)位单元内NPG(NMOSpassgate,选��