Hexagonal gallium nitride film with micron thickness fabricated by nitridation o

For the first time to our knowledge, graphitic carbon nitride (g-C3N4) nanosheets are found to be an

一种新型的基于石墨相氮化碳的光电传感器应用于草甘膦的检测，陈四红，张书培，基于结合诱导内移能够使信号On的策略，一种氮化碳修饰的银离子的光电传感应用于草甘膦的检测。石墨相氮化碳作为光敏材料具有很好�

Wavelength tunable photoluminescence (PL) of Si-rich silicon nitride (SRSN) film with buried Si nano

反应溅射氮化铁纳米晶薄膜的霍耳效应,米文博,封秀平,采用反应溅射法制备氮化铁纳米晶薄膜。随着氮气流量的增加,薄膜中的主要相从α-Fe(N)转变为ξ-Fe2N,导电机制也从金属性向半导体特性

There is a rapidly growing demand to use silicon and silicon nitride (Si

Covalent modification of silicon nitride nanopore by amphoteric polylysine for short DNA detection

We demonstrate the possibility of post-fabrication trimming of the response of nitrogen-rich silicon

Performance Improvement of AmorphousIndium-Gallium-Zinc Oxide ReRAM with SiO2 Inserting Layer

热响应PCL膜表面的构筑，赵娜娜，俞丙然，在组织上有效的基因转染依赖于其良好的细胞粘附特性。在这个工作中，我们构筑了热敏性的明胶修饰的聚己酸内酯（PCL）膜，以期望来

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