GaN based p–i–n ultraviolet photodetectors with a thin p type GaN layer on patte
We study the performance of GaN-based p–i–n ultraviolet (UV) photodetectors (PDs) with a 60 nm thin p-type contact layer grown on patterned sapphire substrate (PSS). The PDs on PSS exhibit a low dark current of ~2 pA under a bias of -5 V, a large UV/visible rejection ratio of ~7×103, and a high-quan
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