Vertically aligned ultrathin MoS2 nanosheets grown on graphene wrapped hollow ca

The 2SJ355 is a P-channel MOS FET of a vertical type and is a switching element that can be directly

Electron dynamics in MoS2-graphite heterostructures

1. MOS结构 2. MOS的I/V特性 2.1MOS的阈值电压Vth、 2.2 I/V特性的推导 3.二阶效应 3.1体效应 、 3.2 亚阈值效应、 3.3 沟道调制效应 4. 小信号模型 5.

Molybdenum disulphide (MoS2), a layered quasi-two dimensional (2D) chalcogenide material, is a subje

Pure BiFeO3 and Gd, Mn doped BiFeO3 particles were synthesized with a hydrothermal method in a react

通过氧气吸附和解吸将多层MoS2晶体管中的阈值电压从耗尽调整为增强模式

从单层MoS2场效应晶体管的磁滞栅极传输特性中获得的缺陷状态的密度

Al2O3-ZrO2复合中空纤维超滤膜的制备与性能，李健生，郝艳霞，以异丙醇铝和氧氯化锆为原料采用过滤技术和溶胶-凝胶过程制备了Al2O3-ZrO2复合中空纤维超滤膜。分别采用XRD, FT-IR 光

In this paper, tin disulfide (SnS2), a two-dimensional (2D) n-type direct bandgap layered metal dich

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