Observation of Room Temperature Magnetoresistance in Monolayer MoS2 by Ferromagn

The 2SJ355 is a P-channel MOS FET of a vertical type and is a switching element that can be directly

Electron dynamics in MoS2-graphite heterostructures

1. MOS结构 2. MOS的I/V特性 2.1MOS的阈值电压Vth、 2.2 I/V特性的推导 3.二阶效应 3.1体效应 、 3.2 亚阈值效应、 3.3 沟道调制效应 4. 小信号模型 5.

Molybdenum disulphide (MoS2), a layered quasi-two dimensional (2D) chalcogenide material, is a subje

表面形态可调分形微观粒子Ag单层SERS基底的制备及性能研究，朱双美，范春珍，探索了一种简单的合成系统得到不同表面形貌的分形微观粒子银单层薄膜，用其作为SERS基底探索不同表面形态微观粒子银单层的SE

通过氧气吸附和解吸将多层MoS2晶体管中的阈值电压从耗尽调整为增强模式

从单层MoS2场效应晶体管的磁滞栅极传输特性中获得的缺陷状态的密度

Giant magnetoresistance and spin-filtering effects in zigzag graphene and hexagonal boron nitride ba

Controllable magnetoresistance device based on a d-doped magnetic nanostructure

Controllable giant magnetoresistance in a d-doped magnetically confined semiconductor heterostructur