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Resistive Effect and Conduction Mechanism of BiFeO3 Thin Films
Role of ITO electrode in the resistive switching behavior of TiN/HfO2/ITO memory devices at differen
Intrinsic and interfacial effect of electrode metals on the resistive switching behaviors of zinc ox
BiFeO3磁矩反转文章，3M文章详细计算了BFO磁矩反转机制。
Au/Nb:SrTiO3/Ti structures were fabricated by depositing Au and Ti electrodes on a single crystal 0.
We report on highly uniform resistive switching properties of amorphous InGaZnO (a-IGZO) thin films.
低限流下含Ag电极的BiFeO3薄膜的电阻开关特性
溶胶凝胶法制备BiFeO3纳米粉末，耿芳芳，朱卫华，BiFeO3在高密度记忆元件、信息储存等方面都有极其重要的应用前景，但在制备工艺方面却存在制备方法复杂和纯相难以获得等问题。为了
Threshold Switching Behavior of Ag-SiTe-Based Selector Device and Annealing Effect on Its Characteri
Fe-Doped LaNiO3 Thin Films as Electrodes for BiFeO3 Ferroelectric Thin Films
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