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Low Current Resistive Switching Behavior in BiFeO3 Films with Ag Electrode
Intrinsic and interfacial effect of electrode metals on the resistive switching behaviors of zinc ox
An Optoelectronic Resistive Switching Memory with Integrated Demodulating and Arithmetic Functions
In this work, amorphous MgZnO/ZnO heterostructure films were deposited on Pt/TiO2/SiO2/Si at room te
On the origin of enhanced resistive switching behaviors of Ti-doped HfO2 film with nitrogen annealin
Exploring the role of nitrogen incorporation in ZrO2 resistive switching film for enhancing the devi
Au/Nb:SrTiO3/Ti structures were fabricated by depositing Au and Ti electrodes on a single crystal 0.
Write-Once-Read-Many-Timesand Bipolar Resistive Switching Characteristics of TiN/HfO2/PtDevices Depe
HfO2薄膜的电阻开关效应(1) • 几种存储器原理与性能比较 • 电致电阻材料与研究现状 • 电阻存储器原理与基本机制 • 氧化铪的研究现状
利用电子束蒸发和自动晶控技术制备了氧化铪薄膜,并对薄膜进行了退火处理。通过光致发光(PL)光谱、光致发光激发谱(PLE)和X射线衍射(XRD)等测试对HfO2薄膜进行表征,研究了退火对HfO2薄膜结构
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