Advancements in the study of IGBT accelerated aging are evident in the data provided by NASA Ames' Prognostics CoE. This valuable dataset, originating from thermal stress-induced aging and characterization systems, features aging data from six distinct devices. Notably, one device undergoes aging with direct current gate bias, while the remaining devices experience aging with signal gate bias squared. The dataset captures a range of variables, including swift measurements of gate voltage, collector-emitter voltage, and collector current in specific scenarios.